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| 2SC3356 Elektronische Bauelemente NPN Silicon Plastic-Encapsulate Transistor A suffix of "-C" specifies halogen & lead-free SOT-23 Dim A Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 A L FEATURES n 3.COLLECTOR 3 B C BS 2 Power Dissipation RoHS Compliant Product 1.BASE 2.EMITTER Top View 1 D G H J K L S V n V G C D H K J All Dimension in mm MAXIMUM RATINGS* TA=25 C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ, Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature o o Value 20 12 3 0.1 Units V V V A W o 0.2 -55~150 C ELECTRICAL CH ARACTERIST ICS (Tam b = 25 C Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Noise figure Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE unless otherwise sp ecified ) Test conditions MIN 20 12 3 1 1 50 6 2 300 GHz dB TYP MAX UNIT V V V Ic=10A, IE=0 Ic= 1mA, IB=0 IE= 10A, IC=0 VCB= 10 V , IE=0 VEB= 1V , IC=0 A A VCE= 10V, IC= 20mA VCE=10V, IC= 20mA VCE=10V, IC= 7mA, f = 1GHz fT F CLASSIFICATION OF hFE Marking Rank Range http://www.SeCoSGmbH.com R23 Q 50-100 R24 R 80-160 R25 S 125-250 Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 3 2SC3356 Elektronische Bauelemente NPN Silicon Plastic-Encapsulate Transistor 2SC3356 TYPICAL CHARACTERISTICS (TA = 25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2 FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE PT-Total Power Dissipation-mW 200 Cre-Feed-back Capacitance-pF Free Air f = 1.0 MHz 1 100 0.5 0 50 100 150 0.3 0 0.5 1 2 5 10 20 30 TA-Ambient Temperature-C DC CURRENT GAIN vs. COLLECTOR CURRENT 200 VCE = 10 V 15 VCB-Collector to Base Voltage-V INSERTION GAIN vs. COLLECTOR CURRENT hFE-DC Current Gain 100 |S21e|2-Insertion Gain-dB 10 50 5 VCE = 10 V f = 1.0 GHz 1 5 10 50 70 IC-Collector Current-mA 20 10 0.5 1 5 10 50 0 0.5 IC-Collector Current-mA GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 10 INSERTION GAIN, MAXIMUM GAIN vs. FREQUENCY Gmax fT-Gain Bandwidth Product-MHz 3.0 2.0 1.0 0.5 0.3 0.2 VCE = 10 V 0.1 0 0.5 1.0 5.0 10 30 Gmax-Maximum Gain-dB |S21e|2-Insertion Gain-dB 5.0 20 |S21e|2 10 0 VCE = 10 V IC = 20 mA 0.1 0.2 0.4 0.6 0.81.0 2 f-Frequency-GHz IC-Collector Current-mA http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 3 2SC3356 Elektronische Bauelemente NPN Silicon Plastic-Encapsulate Transistor NOISE FIGURE vs. COLLECTOR CURRENT 7 6 NF-Noise Figure-dB VCE = 10 V f = 1.0 GHz |S21e|2-Insertion Gain-dB 18 15 NF-Noise Figure-dB 5 4 3 2 1 0 0.5 1 5 10 50 70 NOISE FIGURE, FORWARD INSERTION GAIN vs. COLLECTOR TO EMITTER VOLTAGE 5 f = 1.0 GHz IC = 20 mA 4 2 |S 21e| 3 2 NF 1 12 6 3 0 0 2 4 6 8 10 IC-Collector Current-mA VCE-Collector to Emitter Voltage-V http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 3 |
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